Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

A. V.V. Nampoothiri; B. P. Nelson; S. L. Dexheimer

doi:10.1557/proc-762-a4.4

Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

A. V.V. Nampoothiri
, B. P. Nelson
, S. L. Dexheimer

Materials, Chemical, and Computational Science Research Operations

Washington State University Pullman

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

We present femtosecond time-resolved studies of the photoexcited carrier response in the far-infrared spectral range in PECVD a-Si:H and a-SiGe:H thin films. The experiments are carried out using an optical pump / terahertz (THz) probe technique, in which a femtosecond pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in the far-infrared optical properties as a function of time delay following the excitation. These measurements are sensitive to carrier processes at low energy, corresponding to a range of approximately 1-10 meV, a key energy scale in these materials. We find that the observed photoexcited carrier dynamics are consistent with trapping of carriers into band tail states on a picosecond time scale.

Original language	American English
Pages	333-337
Number of pages	5
DOIs	https://doi.org/10.1557/proc-762-a4.4
State	Published - 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003
Country/Territory	United States
City	San Francisco, CA
Period	22/04/03 → 25/04/03

NLR Publication Number

NREL/CP-520-36070

Access to Document

10.1557/proc-762-a4.4

Cite this

Nampoothiri, A. V. V., Nelson, B. P., & Dexheimer, S. L. (2003). Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys. 333-337. Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States. https://doi.org/10.1557/proc-762-a4.4

@conference{8aeb62489fa94954ad30ef46cca43b0a,

title = "Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys",

abstract = "We present femtosecond time-resolved studies of the photoexcited carrier response in the far-infrared spectral range in PECVD a-Si:H and a-SiGe:H thin films. The experiments are carried out using an optical pump / terahertz (THz) probe technique, in which a femtosecond pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in the far-infrared optical properties as a function of time delay following the excitation. These measurements are sensitive to carrier processes at low energy, corresponding to a range of approximately 1-10 meV, a key energy scale in these materials. We find that the observed photoexcited carrier dynamics are consistent with trapping of carriers into band tail states on a picosecond time scale.",

author = "Nampoothiri, \{A. V.V.\} and Nelson, \{B. P.\} and Dexheimer, \{S. L.\}",

year = "2003",

doi = "10.1557/proc-762-a4.4",

language = "American English",

pages = "333--337",

note = "Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

}

Nampoothiri, AVV, Nelson, BP & Dexheimer, SL 2003, 'Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys', Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States, 22/04/03 - 25/04/03 pp. 333-337. https://doi.org/10.1557/proc-762-a4.4

Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys. / Nampoothiri, A. V.V.; Nelson, B. P.; Dexheimer, S. L.
2003. 333-337 Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

AU - Nampoothiri, A. V.V.

AU - Nelson, B. P.

AU - Dexheimer, S. L.

PY - 2003

Y1 - 2003

N2 - We present femtosecond time-resolved studies of the photoexcited carrier response in the far-infrared spectral range in PECVD a-Si:H and a-SiGe:H thin films. The experiments are carried out using an optical pump / terahertz (THz) probe technique, in which a femtosecond pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in the far-infrared optical properties as a function of time delay following the excitation. These measurements are sensitive to carrier processes at low energy, corresponding to a range of approximately 1-10 meV, a key energy scale in these materials. We find that the observed photoexcited carrier dynamics are consistent with trapping of carriers into band tail states on a picosecond time scale.

AB - We present femtosecond time-resolved studies of the photoexcited carrier response in the far-infrared spectral range in PECVD a-Si:H and a-SiGe:H thin films. The experiments are carried out using an optical pump / terahertz (THz) probe technique, in which a femtosecond pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in the far-infrared optical properties as a function of time delay following the excitation. These measurements are sensitive to carrier processes at low energy, corresponding to a range of approximately 1-10 meV, a key energy scale in these materials. We find that the observed photoexcited carrier dynamics are consistent with trapping of carriers into band tail states on a picosecond time scale.

UR - https://www.scopus.com/pages/publications/1642500422

U2 - 10.1557/proc-762-a4.4

DO - 10.1557/proc-762-a4.4

M3 - Paper

AN - SCOPUS:1642500422

SP - 333

EP - 337

T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003

Y2 - 22 April 2003 through 25 April 2003

ER -

Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

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