Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

Chieh Ting Lin; W. E. McMahon; J. S. Ward; J. F. Geisz; M. W. Wanlass; J. J. Carapella; W. Olavarria; M. Young; M. A. Steiner; R. M. Frances; A. E. Kibbler; A. Duda; J. M. Olson; E. E. Perl; D. J. Friedman; J. E. Bowers

doi:10.1109/PVSC.2012.6317758

Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

Chieh Ting Lin
, W. E. McMahon
, J. S. Ward
, J. F. Geisz
, M. W. Wanlass
, J. J. Carapella
, W. Olavarria
, M. Young
, M. A. Steiner
, R. M. Frances
, A. E. Kibbler
, A. Duda
, J. M. Olson
, E. E. Perl
, D. J. Friedman
, J. E. Bowers

University of California at Santa Barbara
National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO ₂ or GaInP₂ as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP₂ optical coupling layer, with a post-bonding V_oc of 2.7 eV.

Original language	American English
Pages	944-948
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2012.6317758 https://doi.org/10.1109/PVSC.2012.6317758
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

NLR Publication Number

NREL/CP-5200-57530

Keywords

device bonding
III-V multijunction solar cell

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Lin, C. T., McMahon, W. E., Ward, J. S., Geisz, J. F., Wanlass, M. W., Carapella, J. J., Olavarria, W., Young, M., Steiner, M. A., Frances, R. M., Kibbler, A. E., Duda, A., Olson, J. M., Perl, E. E., Friedman, D. J., & Bowers, J. E. (2012). Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells. 944-948. Paper presented at 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States. https://doi.org/10.1109/PVSC.2012.6317758, https://doi.org/10.1109/PVSC.2012.6317758

@conference{8703c1a66942437888fe93efb61698c3,

title = "Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells",

abstract = "A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.",

keywords = "device bonding, III-V multijunction solar cell",

author = "Lin, \{Chieh Ting\} and McMahon, \{W. E.\} and Ward, \{J. S.\} and Geisz, \{J. F.\} and Wanlass, \{M. W.\} and Carapella, \{J. J.\} and W. Olavarria and M. Young and Steiner, \{M. A.\} and Frances, \{R. M.\} and Kibbler, \{A. E.\} and A. Duda and Olson, \{J. M.\} and Perl, \{E. E.\} and Friedman, \{D. J.\} and Bowers, \{J. E.\}",

year = "2012",

doi = "10.1109/PVSC.2012.6317758",

language = "American English",

pages = "944--948",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Lin, CT, McMahon, WE, Ward, JS, Geisz, JF, Wanlass, MW, Carapella, JJ, Olavarria, W, Young, M , Steiner, MA, Frances, RM, Kibbler, AE, Duda, A, Olson, JM, Perl, EE, Friedman, DJ & Bowers, JE 2012, 'Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells', Paper presented at 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12 - 8/06/12 pp. 944-948. https://doi.org/10.1109/PVSC.2012.6317758, https://doi.org/10.1109/PVSC.2012.6317758

TY - CONF

T1 - Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

AU - Lin, Chieh Ting

AU - McMahon, W. E.

AU - Ward, J. S.

AU - Geisz, J. F.

AU - Wanlass, M. W.

AU - Carapella, J. J.

AU - Olavarria, W.

AU - Young, M.

AU - Steiner, M. A.

AU - Frances, R. M.

AU - Kibbler, A. E.

AU - Duda, A.

AU - Olson, J. M.

AU - Perl, E. E.

AU - Friedman, D. J.

AU - Bowers, J. E.

PY - 2012

Y1 - 2012

N2 - A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.

AB - A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.

KW - device bonding

KW - III-V multijunction solar cell

UR - https://www.scopus.com/pages/publications/84869432208

U2 - 10.1109/PVSC.2012.6317758

DO - 10.1109/PVSC.2012.6317758

M3 - Paper

AN - SCOPUS:84869432208

SP - 944

EP - 948

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

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Keywords

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