External Radiative Quantum Efficiency of 96% from a GaAs/GaInP Heterostructure

doi:10.1007/s003390050455

External Radiative Quantum Efficiency of 96% from a GaAs/GaInP Heterostructure

NREL

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Abstract

GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, externalefficiencies exceeding 97.5% would yield optical refrigeration in the solid state.

Original language	American English
Pages (from-to)	143-147
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	64
Issue number	2
DOIs	https://doi.org/10.1007/s003390050455
State	Published - 1997

NLR Publication Number

NREL/JA-451-23053

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10.1007/s003390050455

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@article{9d6a7fe9a7b244968b30c356aebc759d,

title = "External Radiative Quantum Efficiency of 96\% from a GaAs/GaInP Heterostructure",

abstract = "GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96\% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, externalefficiencies exceeding 97.5\% would yield optical refrigeration in the solid state.",

author = "NREL",

year = "1997",

doi = "10.1007/s003390050455",

language = "American English",

volume = "64",

pages = "143--147",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

number = "2",

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T1 - External Radiative Quantum Efficiency of 96% from a GaAs/GaInP Heterostructure

AU - NREL, null

PY - 1997

Y1 - 1997

N2 - GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, externalefficiencies exceeding 97.5% would yield optical refrigeration in the solid state.

AB - GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, externalefficiencies exceeding 97.5% would yield optical refrigeration in the solid state.

U2 - 10.1007/s003390050455

DO - 10.1007/s003390050455

M3 - Article

SN - 0947-8396

VL - 64

SP - 143

EP - 147

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

External Radiative Quantum Efficiency of 96% from a GaAs/GaInP Heterostructure

Abstract

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