Explanation of Red Spectral Shifts at CdTe Grain Boundaries

J. Moseley; M. M. Al-Jassim; H. R. Moutinho; H. L. Guthrey; W. K. Metzger; R. K. Ahrenkiel

doi:10.1063/1.4838015

Explanation of Red Spectral Shifts at CdTe Grain Boundaries

J. Moseley
, M. M. Al-Jassim
, H. R. Moutinho
, H. L. Guthrey
, W. K. Metzger
, R. K. Ahrenkiel

Materials Science

National Renewable Energy Laboratory
Colorado School of Mines
Tata Institute of Fundamental Research

Research output: Contribution to journal › Article › peer-review

16 Scopus Citations

Abstract

We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼10¹⁷ cm^-3.

Original language	American English
Article number	Article No. 233103
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4838015 https://doi.org/10.1063/1.4838015
State	Published - 2 Dec 2013

NLR Publication Number

NREL/JA-5200-60454

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title = "Explanation of Red Spectral Shifts at CdTe Grain Boundaries",

abstract = "We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.",

author = "J. Moseley and Al-Jassim, \{M. M.\} and Moutinho, \{H. R.\} and Guthrey, \{H. L.\} and Metzger, \{W. K.\} and Ahrenkiel, \{R. K.\}",

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doi = "10.1063/1.4838015",

language = "American English",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Explanation of Red Spectral Shifts at CdTe Grain Boundaries

AU - Moseley, J.

AU - Al-Jassim, M. M.

AU - Moutinho, H. R.

AU - Guthrey, H. L.

AU - Metzger, W. K.

AU - Ahrenkiel, R. K.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.

AB - We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.

UR - https://www.scopus.com/pages/publications/84889851434

U2 - 10.1063/1.4838015

DO - 10.1063/1.4838015

M3 - Article

AN - SCOPUS:84889851434

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - Article No. 233103

ER -

Explanation of Red Spectral Shifts at CdTe Grain Boundaries

Abstract

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