Explanation for the Low-Temperature H Evolution Peak in Hydrogenated Amorphous Silicon Films Deposited 'On the Edge of Crystallinity'

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	647-652
Number of pages	6
Journal	Philosophical Magazine Letters
Volume	80
Issue number	9
DOIs	https://doi.org/10.1080/09500830050134372
State	Published - 2000

NLR Publication Number

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title = "Explanation for the Low-Temperature H Evolution Peak in Hydrogenated Amorphous Silicon Films Deposited 'On the Edge of Crystallinity'",

author = "NREL",

year = "2000",

doi = "10.1080/09500830050134372",

language = "American English",

volume = "80",

pages = "647--652",

journal = "Philosophical Magazine Letters",

issn = "0950-0839",

publisher = "Taylor and Francis Ltd.",

number = "9",

}

TY - JOUR

T1 - Explanation for the Low-Temperature H Evolution Peak in Hydrogenated Amorphous Silicon Films Deposited 'On the Edge of Crystallinity'

AU - NREL, null

PY - 2000

Y1 - 2000

U2 - 10.1080/09500830050134372

DO - 10.1080/09500830050134372

M3 - Article

SN - 0950-0839

VL - 80

SP - 647

EP - 652

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

IS - 9

ER -