Exciton Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Ordered and Disordered InGaP Alloys

Exciton Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Ordered and Disordered InGaP Alloys

NREL

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Original language	American English
Pages	313-318
Number of pages	6
State	Published - 2002
Event	Progress in Semiconductor Materials for Optoelectronic Applications: Materials Research Society Symposium - Boston, Massachusetts Duration: 26 Nov 2001 → 29 Nov 2001

Conference

Conference	Progress in Semiconductor Materials for Optoelectronic Applications: Materials Research Society Symposium
City	Boston, Massachusetts
Period	26/11/01 → 29/11/01

NLR Publication Number

NREL/CP-590-40991

Cite this

@conference{ffea58ed3b3f47f78630754ad08abeed,

title = "Exciton Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Ordered and Disordered InGaP Alloys",

author = "NREL",

year = "2002",

language = "American English",

pages = "313--318",

note = "Progress in Semiconductor Materials for Optoelectronic Applications: Materials Research Society Symposium ; Conference date: 26-11-2001 Through 29-11-2001",

}