Evolution of Superclusters and Delocalized States in GaAs1-xNx

B. Fluegel; K. Alberi; D. A. Beaton; S. A. Crooker; A. J. Ptak; A. Mascarenhas

doi:10.1103/PhysRevB.86.205203

Evolution of Superclusters and Delocalized States in GaAs1-xNx

B. Fluegel
, K. Alberi
, D. A. Beaton
, S. A. Crooker
, A. J. Ptak
, A. Mascarenhas

National Renewable Energy Laboratory
United States Department of Energy

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs _1-xN _x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

Original language	American English
Article number	205203
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.86.205203 https://doi.org/10.1103/PhysRevB.86.205203
State	Published - 21 Nov 2012

NLR Publication Number

NREL/JA-5900-56970

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title = "Evolution of Superclusters and Delocalized States in GaAs1-xNx",

abstract = "The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23\% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23\% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32\% N.",

author = "B. Fluegel and K. Alberi and Beaton, \{D. A.\} and Crooker, \{S. A.\} and Ptak, \{A. J.\} and A. Mascarenhas",

year = "2012",

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doi = "10.1103/PhysRevB.86.205203",

language = "American English",

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T1 - Evolution of Superclusters and Delocalized States in GaAs1-xNx

AU - Fluegel, B.

AU - Alberi, K.

AU - Beaton, D. A.

AU - Crooker, S. A.

AU - Ptak, A. J.

AU - Mascarenhas, A.

PY - 2012/11/21

Y1 - 2012/11/21

N2 - The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

AB - The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

UR - https://www.scopus.com/pages/publications/84870214762

U2 - 10.1103/PhysRevB.86.205203

DO - 10.1103/PhysRevB.86.205203

M3 - Article

AN - SCOPUS:84870214762

SN - 1098-0121

VL - 86

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 205203

ER -

Evolution of Superclusters and Delocalized States in GaAs1-xNx

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