Abstract
Deep hole-traps in a series of InGaAsN alloys were measured using deep-level transient spectroscopy (DLTS). A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were also studied. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples is observed.
| Original language | American English |
|---|---|
| Pages (from-to) | 908-910 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2003 |
NLR Publication Number
- NREL/JA-520-33230
Fingerprint
Dive into the research topics of 'Evidence of the Meyer-Neldel Rule in InGaAsN Alloys and the Problem of Determining Trap Capture Cross Sections'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver