Etching of Indium Tin Oxide in Methane/Hydrogen Plasmas

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	3551-3445
Number of pages	107
Journal	Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena
Volume	9
Issue number	6
DOIs	https://doi.org/10.1116/1.585843
State	Published - 1991

NLR Publication Number

@article{3c9ebfce04d44c53a60b142ea1ffb4cb,

title = "Etching of Indium Tin Oxide in Methane/Hydrogen Plasmas",

author = "NREL",

year = "1991",

doi = "10.1116/1.585843",

language = "American English",

volume = "9",

pages = "3551--3445",

journal = "Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

number = "6",

}

TY - JOUR

T1 - Etching of Indium Tin Oxide in Methane/Hydrogen Plasmas

AU - NREL, null

PY - 1991

Y1 - 1991

U2 - 10.1116/1.585843

DO - 10.1116/1.585843

M3 - Article

SN - 0734-211X

VL - 9

SP - 3551

EP - 3445

JO - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

IS - 6

ER -