Abstract
The band gap of a thin layer of InPO4 was estimated to be 4.5 eV using a novel approach employing ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. The technique measures the conduction-band minimum and valence-band maximum referenced to the In 4d core line energy. Since this technique is highly surface sensitive, it can be used to measure the band gap of a thin layer. This parameter is difficult to measure in such layers using conventional techniques.
| Original language | American English |
|---|---|
| Pages (from-to) | 589-591 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 42 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1983 |
Bibliographical note
Work performed by Hughes Research Laboratories, Malibu, California; Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado; and Solar Energy Research Institute, Golden, ColoradoNLR Publication Number
- ACNR/JA-213-4096
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