Abstract
The purpose of this CRADA is to assist Trumpf Photonics in developing a procedure to grow ZnSe epilayers on the (110) facets of AlGaAs/InGaAs laser diodes that will provide high degrees of electronic passivation and performance reliability. Work will be divided into four tasks: 1) characterization of material growth at Trumpf Photonics, 2) development of a highly effective AlGaAs facet cleaning procedure at NREL, 3) development of a ZnSe epitaxy procedure at NREL, and 4) transfer of the procedures developed at NREL to the Trumpf Photonics site. This CRADA is designed to last 3 years total.
| Original language | American English |
|---|---|
| Number of pages | 20 |
| DOIs | |
| State | Published - 2025 |
NLR Publication Number
- NREL/TP-5K00-94079
Keywords
- CRADA
- epitaxy
- laser
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