Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors: Article No. 7136

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NLR Publication Number

@article{d2a85a973e2640d78a67c0c286b170a8,

title = "Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors: Article No. 7136",

keywords = "AlGaAs, raman, strain",

author = "Brian Fluegel and Aleksej Mialitsin and John Reno and Daniel Beaton and Angelo Mascarenhas",

year = "2015",

doi = "10.1038/ncomms8136",

language = "American English",

volume = "6",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Nature Research",

}

TY - JOUR

T1 - Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

T2 - Article No. 7136

AU - Fluegel, Brian

AU - Mialitsin, Aleksej

AU - Reno, John

AU - Beaton, Daniel

AU - Mascarenhas, Angelo

PY - 2015

Y1 - 2015

KW - AlGaAs

KW - raman

KW - strain

U2 - 10.1038/ncomms8136

DO - 10.1038/ncomms8136

M3 - Article

SN - 2041-1723

VL - 6

JO - Nature Communications

JF - Nature Communications

ER -