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Electron Traps In p-Type GaAsN Characterized by Deep-Level Transient Spectroscopy
NREL
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Dive into the research topics of 'Electron Traps In p-Type GaAsN Characterized by Deep-Level Transient Spectroscopy'. Together they form a unique fingerprint.
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Engineering
Transients
100%
Deep Level
100%
Electron Trap
100%
Peak Signal
28%
Minority Carriers
28%
Series Resistance
14%
Metal Organic Chemical Vapor Deposition
14%
Reverse Bias
14%
Depletion Region
14%
Schottky Barrier
14%
Measured Sample
14%
Peak Magnitude
14%
Optical Source
14%
Open Circuit Voltage
14%
Activation Energy
14%
Carrier Concentration
14%
Material Science
Deep-Level Transient Spectroscopy
100%
Electronic Circuit
50%
Density
50%
Carrier Concentration
50%
Capacitance
50%
Activation Energy
50%
Metal-Organic Chemical Vapor Deposition
50%
Schottky Barrier
50%
Earth and Planetary Sciences
Open Circuit Voltage
100%
Metalorganic Chemical Vapor Deposition
100%