Electron Energy-Loss Spectroscopy Analysis of Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films

A. J. Nelson; D. K. Benson; C. E. Tracy; L. L. Kazmerski; J. F. Wager

doi:10.1116/1.576284

Electron Energy-Loss Spectroscopy Analysis of Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films

A. J. Nelson
, D. K. Benson
, C. E. Tracy
, L. L. Kazmerski
, J. F. Wager

Materials Science

National Renewable Energy Laboratory
Oregon State University

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (> 100 °C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp3carbon bonding to threefold coordinated sp2carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

Original language	American English
Pages (from-to)	1350-1352
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.576284 https://doi.org/10.1116/1.576284
State	Published - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon

NLR Publication Number

ACNR/JA-213-11050

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title = "Electron Energy-Loss Spectroscopy Analysis of Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films",

abstract = "Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (> 100 °C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp3carbon bonding to threefold coordinated sp2carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.",

author = "Nelson, \{A. J.\} and Benson, \{D. K.\} and Tracy, \{C. E.\} and Kazmerski, \{L. L.\} and Wager, \{J. F.\}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon",

year = "1989",

doi = "10.1116/1.576284",

language = "American English",

volume = "7",

pages = "1350--1352",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

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TY - JOUR

T1 - Electron Energy-Loss Spectroscopy Analysis of Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films

AU - Nelson, A. J.

AU - Benson, D. K.

AU - Tracy, C. E.

AU - Kazmerski, L. L.

AU - Wager, J. F.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon

PY - 1989

Y1 - 1989

N2 - Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (> 100 °C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp3carbon bonding to threefold coordinated sp2carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

AB - Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (> 100 °C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp3carbon bonding to threefold coordinated sp2carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

UR - https://www.scopus.com/pages/publications/84919173000

U2 - 10.1116/1.576284

DO - 10.1116/1.576284

M3 - Article

AN - SCOPUS:84919173000

SN - 0734-2101

VL - 7

SP - 1350

EP - 1352

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Electron Energy-Loss Spectroscopy Analysis of Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films

Abstract

Bibliographical note

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