Electrical and Optical Properties of Doped Tin and Zinc Oxide Thin Films by Atmospheric Pressure Chemical Vapor Deposition

Electrical and Optical Properties of Doped Tin and Zinc Oxide Thin Films by Atmospheric Pressure Chemical Vapor Deposition

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	381-387
Number of pages	7
State	Published - 1992
Event	Photovoltaic Advanced Research and Development Project: 11th Review Meeting - Denver, Colorado Duration: 13 May 1992 → 15 May 1992

Conference

Conference	Photovoltaic Advanced Research and Development Project: 11th Review Meeting
City	Denver, Colorado
Period	13/05/92 → 15/05/92

Bibliographical note

Work performed by Harvard University, Cambridge, Massachusetts

NLR Publication Number

ACNR/CP-14757

Cite this

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title = "Electrical and Optical Properties of Doped Tin and Zinc Oxide Thin Films by Atmospheric Pressure Chemical Vapor Deposition",

author = "NREL",

note = "Work performed by Harvard University, Cambridge, Massachusetts; Photovoltaic Advanced Research and Development Project: 11th Review Meeting ; Conference date: 13-05-1992 Through 15-05-1992",

year = "1992",

language = "American English",

pages = "381--387",

}

TY - CONF

T1 - Electrical and Optical Properties of Doped Tin and Zinc Oxide Thin Films by Atmospheric Pressure Chemical Vapor Deposition

AU - NREL, null

N1 - Work performed by Harvard University, Cambridge, Massachusetts

PY - 1992

Y1 - 1992

M3 - Paper

SP - 381

EP - 387

T2 - Photovoltaic Advanced Research and Development Project: 11th Review Meeting

Y2 - 13 May 1992 through 15 May 1992

ER -