Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Brian P. Gorman; Andrew G. Norman; Reiko Lukic-Zrnic; Terry D. Golding; Chris L. Littler

doi:10.1557/proc-794-t10.6

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Brian P. Gorman
, Andrew G. Norman
, Reiko Lukic-Zrnic
, Terry D. Golding
, Chris L. Littler

Materials Science

University of North Texas

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Spontaneous atomic ordering is investigated in a series of GaAs _1-xSb_x epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) - 8⁰ toward (111)A, (001) - 8⁰ toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs_1-xSb_x grown on (111)A-type orientations.

Original language	American English
Pages	309-314
Number of pages	6
DOIs	https://doi.org/10.1557/proc-794-t10.6
State	Published - 2003
Event	Self-Organized Processes in Semiconductor Heteroepitaxy - Boston, MA, United States Duration: 1 Dec 2003 → 5 Dec 2003

Conference

Conference	Self-Organized Processes in Semiconductor Heteroepitaxy
Country/Territory	United States
City	Boston, MA
Period	1/12/03 → 5/12/03

NLR Publication Number

NREL/CP-520-37301

Access to Document

10.1557/proc-794-t10.6

Cite this

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title = "Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy",

abstract = "Spontaneous atomic ordering is investigated in a series of GaAs 1-xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) - 80 toward (111)A, (001) - 80 toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1-xSbx grown on (111)A-type orientations.",

author = "Gorman, \{Brian P.\} and Norman, \{Andrew G.\} and Reiko Lukic-Zrnic and Golding, \{Terry D.\} and Littler, \{Chris L.\}",

year = "2003",

doi = "10.1557/proc-794-t10.6",

language = "American English",

pages = "309--314",

note = "Self-Organized Processes in Semiconductor Heteroepitaxy ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - CONF

T1 - Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

AU - Gorman, Brian P.

AU - Norman, Andrew G.

AU - Lukic-Zrnic, Reiko

AU - Golding, Terry D.

AU - Littler, Chris L.

PY - 2003

Y1 - 2003

N2 - Spontaneous atomic ordering is investigated in a series of GaAs 1-xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) - 80 toward (111)A, (001) - 80 toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1-xSbx grown on (111)A-type orientations.

AB - Spontaneous atomic ordering is investigated in a series of GaAs 1-xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) - 80 toward (111)A, (001) - 80 toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1-xSbx grown on (111)A-type orientations.

UR - https://www.scopus.com/pages/publications/2942631223

U2 - 10.1557/proc-794-t10.6

DO - 10.1557/proc-794-t10.6

M3 - Paper

AN - SCOPUS:2942631223

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EP - 314

T2 - Self-Organized Processes in Semiconductor Heteroepitaxy

Y2 - 1 December 2003 through 5 December 2003

ER -

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

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