Effects of Doping on Transport and Deep Trapping in Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NLR Publication Number

@article{57e13d6cc6e7431e84694e25c319ef5a,

title = "Effects of Doping on Transport and Deep Trapping in Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1983",

doi = "10.1063/1.94441",

language = "American English",

volume = "43",

pages = "672--674",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Effects of Doping on Transport and Deep Trapping in Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1983

Y1 - 1983

U2 - 10.1063/1.94441

DO - 10.1063/1.94441

M3 - Article

SN - 0003-6951

VL - 43

SP - 672

EP - 674

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -