Effects of Covalency, p-d Coupling, and Epitaxial Strain on the Band Offsets of II-VI Semiconductors: Article No. 165336

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Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.68.165336
State	Published - 2003

NLR Publication Number

@article{e02e3ee03a0c4a2aa3f6da85849e4d1e,

title = "Effects of Covalency, p-d Coupling, and Epitaxial Strain on the Band Offsets of II-VI Semiconductors: Article No. 165336",

author = "Suhuai Wei",

year = "2003",

doi = "10.1103/PhysRevB.68.165336",

language = "American English",

volume = "68",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Effects of Covalency, p-d Coupling, and Epitaxial Strain on the Band Offsets of II-VI Semiconductors

T2 - Article No. 165336

AU - Wei, Suhuai

PY - 2003

Y1 - 2003

U2 - 10.1103/PhysRevB.68.165336

DO - 10.1103/PhysRevB.68.165336

M3 - Article

SN - 1098-0121

VL - 68

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -