Effects of Buffer Layer Processing on CIGs Excess Carrier Lifetime: Application of Dual-Beam Optical Modulation to Process Analysis

doi:10.1109/PVSC.1996.564254

Effects of Buffer Layer Processing on CIGs Excess Carrier Lifetime: Application of Dual-Beam Optical Modulation to Process Analysis

NREL

Research output: Contribution to conference › Paper

Abstract

A new nondestructive contactless Dual-Beam Optical Modulation (DBOM) technique has been developed for the characterization of effective excess carrier lifetimes in CIS films. Developed originally for lifetime measurement of SOI wafers, the technique represents a novel tool with the capabilities of direct measurement of the lifetime effects of intermediate processing steps during devicefabrication without the confounding effects that subsequent processes might have on the final device characteristics. This is demonstrated in a controlled experiment intended to elucidate the mechanisms whereby CBD CdS processes improve device performance and to compare the CBD process with an MOCVD dry process. Areal mapping of excess carrier lifetimes across the samples is used to exhibit thesubstantial inhomogeneity of lifetime even within very high quality sample, demonstrating another capability of DBOM applicable to quality assessment and process optimization.

Original language	American English
Pages	821-824
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564254
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the University of Florida, Gainesville, Florida

NLR Publication Number

NREL/CP-22409

Access to Document

10.1109/PVSC.1996.564254

Cite this

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title = "Effects of Buffer Layer Processing on CIGs Excess Carrier Lifetime: Application of Dual-Beam Optical Modulation to Process Analysis",

abstract = "A new nondestructive contactless Dual-Beam Optical Modulation (DBOM) technique has been developed for the characterization of effective excess carrier lifetimes in CIS films. Developed originally for lifetime measurement of SOI wafers, the technique represents a novel tool with the capabilities of direct measurement of the lifetime effects of intermediate processing steps during devicefabrication without the confounding effects that subsequent processes might have on the final device characteristics. This is demonstrated in a controlled experiment intended to elucidate the mechanisms whereby CBD CdS processes improve device performance and to compare the CBD process with an MOCVD dry process. Areal mapping of excess carrier lifetimes across the samples is used to exhibit thesubstantial inhomogeneity of lifetime even within very high quality sample, demonstrating another capability of DBOM applicable to quality assessment and process optimization.",

author = "NREL",

note = "Work performed by the University of Florida, Gainesville, Florida; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564254",

language = "American English",

pages = "821--824",

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TY - CONF

T1 - Effects of Buffer Layer Processing on CIGs Excess Carrier Lifetime: Application of Dual-Beam Optical Modulation to Process Analysis

AU - NREL, null

N1 - Work performed by the University of Florida, Gainesville, Florida

PY - 1996

Y1 - 1996

N2 - A new nondestructive contactless Dual-Beam Optical Modulation (DBOM) technique has been developed for the characterization of effective excess carrier lifetimes in CIS films. Developed originally for lifetime measurement of SOI wafers, the technique represents a novel tool with the capabilities of direct measurement of the lifetime effects of intermediate processing steps during devicefabrication without the confounding effects that subsequent processes might have on the final device characteristics. This is demonstrated in a controlled experiment intended to elucidate the mechanisms whereby CBD CdS processes improve device performance and to compare the CBD process with an MOCVD dry process. Areal mapping of excess carrier lifetimes across the samples is used to exhibit thesubstantial inhomogeneity of lifetime even within very high quality sample, demonstrating another capability of DBOM applicable to quality assessment and process optimization.

AB - A new nondestructive contactless Dual-Beam Optical Modulation (DBOM) technique has been developed for the characterization of effective excess carrier lifetimes in CIS films. Developed originally for lifetime measurement of SOI wafers, the technique represents a novel tool with the capabilities of direct measurement of the lifetime effects of intermediate processing steps during devicefabrication without the confounding effects that subsequent processes might have on the final device characteristics. This is demonstrated in a controlled experiment intended to elucidate the mechanisms whereby CBD CdS processes improve device performance and to compare the CBD process with an MOCVD dry process. Areal mapping of excess carrier lifetimes across the samples is used to exhibit thesubstantial inhomogeneity of lifetime even within very high quality sample, demonstrating another capability of DBOM applicable to quality assessment and process optimization.

U2 - 10.1109/PVSC.1996.564254

DO - 10.1109/PVSC.1996.564254

M3 - Paper

SP - 821

EP - 824

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Effects of Buffer Layer Processing on CIGs Excess Carrier Lifetime: Application of Dual-Beam Optical Modulation to Process Analysis

Abstract

Conference

Bibliographical note

NLR Publication Number

Access to Document

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Cite this