Effect of Textured Tin Oxide and Zinc Oxide Substrates on the Current Generation in Amorphous Silicon Solar Cells

doi:10.1109/PVSC.1996.564330

Effect of Textured Tin Oxide and Zinc Oxide Substrates on the Current Generation in Amorphous Silicon Solar Cells

NREL

Research output: Contribution to conference › Paper

Abstract

We evaluate material properties of a number of textured SnO2 and ZnO substrates and their effect on current generation in a-Si. Most of these TCOs have been used by others for a-Si device research of module fabrication. Bulk optoelectronic and structural properties are reported for seven TCO films with haze from 1 to 14%. Our results show that increasing haze above~5% has limited effectivenessfor increasing the generation at long wavelengths. In presently available textured ZnO, current generation is about 0.6 mA/cm2 greater than in textured SnO2. There may be greater advantages to using ZnO in multijunction devices since much thinner i-layers may be used to give the same Jsc with improved stability, shorter deposition time and less GeH4 usage.

Original language	American English
Pages	1129-1132
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564330
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the University of Delaware, Newark, Delaware and Harvard University, Cambridge, Massachusetts

NLR Publication Number

NREL/CP-22512

Access to Document

10.1109/PVSC.1996.564330

Cite this

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title = "Effect of Textured Tin Oxide and Zinc Oxide Substrates on the Current Generation in Amorphous Silicon Solar Cells",

abstract = "We evaluate material properties of a number of textured SnO2 and ZnO substrates and their effect on current generation in a-Si. Most of these TCOs have been used by others for a-Si device research of module fabrication. Bulk optoelectronic and structural properties are reported for seven TCO films with haze from 1 to 14\%. Our results show that increasing haze above\textasciitilde{}5\% has limited effectivenessfor increasing the generation at long wavelengths. In presently available textured ZnO, current generation is about 0.6 mA/cm2 greater than in textured SnO2. There may be greater advantages to using ZnO in multijunction devices since much thinner i-layers may be used to give the same Jsc with improved stability, shorter deposition time and less GeH4 usage.",

author = "NREL",

note = "Work performed by the University of Delaware, Newark, Delaware and Harvard University, Cambridge, Massachusetts; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564330",

language = "American English",

pages = "1129--1132",

}

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T1 - Effect of Textured Tin Oxide and Zinc Oxide Substrates on the Current Generation in Amorphous Silicon Solar Cells

AU - NREL, null

N1 - Work performed by the University of Delaware, Newark, Delaware and Harvard University, Cambridge, Massachusetts

PY - 1996

Y1 - 1996

N2 - We evaluate material properties of a number of textured SnO2 and ZnO substrates and their effect on current generation in a-Si. Most of these TCOs have been used by others for a-Si device research of module fabrication. Bulk optoelectronic and structural properties are reported for seven TCO films with haze from 1 to 14%. Our results show that increasing haze above~5% has limited effectivenessfor increasing the generation at long wavelengths. In presently available textured ZnO, current generation is about 0.6 mA/cm2 greater than in textured SnO2. There may be greater advantages to using ZnO in multijunction devices since much thinner i-layers may be used to give the same Jsc with improved stability, shorter deposition time and less GeH4 usage.

AB - We evaluate material properties of a number of textured SnO2 and ZnO substrates and their effect on current generation in a-Si. Most of these TCOs have been used by others for a-Si device research of module fabrication. Bulk optoelectronic and structural properties are reported for seven TCO films with haze from 1 to 14%. Our results show that increasing haze above~5% has limited effectivenessfor increasing the generation at long wavelengths. In presently available textured ZnO, current generation is about 0.6 mA/cm2 greater than in textured SnO2. There may be greater advantages to using ZnO in multijunction devices since much thinner i-layers may be used to give the same Jsc with improved stability, shorter deposition time and less GeH4 usage.

U2 - 10.1109/PVSC.1996.564330

DO - 10.1109/PVSC.1996.564330

M3 - Paper

SP - 1129

EP - 1132

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Effect of Textured Tin Oxide and Zinc Oxide Substrates on the Current Generation in Amorphous Silicon Solar Cells

Abstract

Conference

Bibliographical note

NLR Publication Number

Access to Document

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Cite this