Effect of Microstructure on Excitonic Luminescence of Spontaneously Ordered Ga0.52In0.48P Alloys

Hyeonsik M. Cheong; A. Mascarenhas; S. P. Ahrenkiel; K. M. Jones; J. F. Geisz; J. M. Olson

doi:10.1063/1.367371

Effect of Microstructure on Excitonic Luminescence of Spontaneously Ordered Ga0.52In0.48P Alloys

Hyeonsik M. Cheong
, A. Mascarenhas
, S. P. Ahrenkiel
, K. M. Jones
, J. F. Geisz
, J. M. Olson

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

22 Scopus Citations

Abstract

We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP₂ alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP₂ is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak.

Original language	American English
Pages (from-to)	5418-5420
Number of pages	3
Journal	Journal of Applied Physics
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.367371 https://doi.org/10.1063/1.367371
State	Published - 1998

NLR Publication Number

NREL/JA-590-25658

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title = "Effect of Microstructure on Excitonic Luminescence of Spontaneously Ordered Ga0.52In0.48P Alloys",

abstract = "We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak.",

author = "Cheong, \{Hyeonsik M.\} and A. Mascarenhas and Ahrenkiel, \{S. P.\} and Jones, \{K. M.\} and Geisz, \{J. F.\} and Olson, \{J. M.\}",

year = "1998",

doi = "10.1063/1.367371",

language = "American English",

volume = "83",

pages = "5418--5420",

journal = "Journal of Applied Physics",

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T1 - Effect of Microstructure on Excitonic Luminescence of Spontaneously Ordered Ga0.52In0.48P Alloys

AU - Cheong, Hyeonsik M.

AU - Mascarenhas, A.

AU - Ahrenkiel, S. P.

AU - Jones, K. M.

AU - Geisz, J. F.

AU - Olson, J. M.

PY - 1998

Y1 - 1998

N2 - We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak.

AB - We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak.

UR - https://www.scopus.com/pages/publications/0000094918

U2 - 10.1063/1.367371

DO - 10.1063/1.367371

M3 - Article

AN - SCOPUS:0000094918

SN - 0021-8979

VL - 83

SP - 5418

EP - 5420

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Effect of Microstructure on Excitonic Luminescence of Spontaneously Ordered Ga0.52In0.48P Alloys

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