Effect of Impurity Trapping on the Capacitance-Voltage Characteristics of n-GaAs/N-AlGaAs Heterojunctions

Research output: Contribution to journal › Article

Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana

NLR Publication Number

@article{1fb686884b604270af3ea4fd2cd387ee,

title = "Effect of Impurity Trapping on the Capacitance-Voltage Characteristics of n-GaAs/N-AlGaAs Heterojunctions",

author = "NREL",

note = "Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana",

year = "1986",

doi = "10.1063/1.96520",

language = "American English",

volume = "48",

pages = "428--430",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Effect of Impurity Trapping on the Capacitance-Voltage Characteristics of n-GaAs/N-AlGaAs Heterojunctions

AU - NREL, null

N1 - Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana

PY - 1986

Y1 - 1986

U2 - 10.1063/1.96520

DO - 10.1063/1.96520

M3 - Article

SN - 0003-6951

VL - 48

SP - 428

EP - 430

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -