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Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application

  • Mowafak Al-Jassim
  • , John Turner
  • , Le Chen
  • , Houwen Tang
  • , Todd Deutsch
  • , Heli Wang
  • , Yanfa Yan
  • , Nuggehalli Ravindra
  • National Renewable Energy Laboratory
  • New Jersey Institute of Technology

Research output: Contribution to conferencePaper

Original languageAmerican English
Pages135-142
Number of pages8
DOIs
StatePublished - 2011
EventTMS 2011 - 140th Annual Meeting and Exhibition - San Diego, California
Duration: 27 Feb 20113 Mar 2011

Conference

ConferenceTMS 2011 - 140th Annual Meeting and Exhibition
CitySan Diego, California
Period27/02/113/03/11

NLR Publication Number

  • NREL/CP-5200-52606

Keywords

  • band gap
  • co-doping
  • crystallinity
  • gas ambient
  • N concentration
  • photoelectrochemical
  • RF power
  • sputter
  • substrate temperature
  • ZnO
  • ZnO:(ALN)

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