Effect of Deep States on the Photovoltaic Performance of CdZnS/CuInSe2 Thin Film Devices

R. K. Ahrenkiel

doi:10.1016/0379-6787(86)90109-2

Effect of Deep States on the Photovoltaic Performance of CdZnS/CuInSe2 Thin Film Devices

R. K. Ahrenkiel

Materials Science

Research output: Contribution to journal › Article › peer-review

32 Scopus Citations

Abstract

High densities of both bulk and interface states were found in CdZnS/CuInSe₂ thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced the CuInSe₂ diffusion potential. A model was proposed using interface recombination as the only diode current mechanism. This model relates interface state charging to a reduced open-circuit voltage.

Original language	American English
Pages (from-to)	549-565
Number of pages	17
Journal	Solar Cells
Volume	16
Issue number	C
DOIs	https://doi.org/10.1016/0379-6787(86)90109-2 https://doi.org/10.1016/0379-6787(86)90109-2
State	Published - 1986

NLR Publication Number

ACNR/JA-213-8062

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title = "Effect of Deep States on the Photovoltaic Performance of CdZnS/CuInSe2 Thin Film Devices",

abstract = "High densities of both bulk and interface states were found in CdZnS/CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced the CuInSe2 diffusion potential. A model was proposed using interface recombination as the only diode current mechanism. This model relates interface state charging to a reduced open-circuit voltage.",

author = "Ahrenkiel, \{R. K.\}",

year = "1986",

doi = "10.1016/0379-6787(86)90109-2",

language = "American English",

volume = "16",

pages = "549--565",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier B.V.",

number = "C",

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TY - JOUR

T1 - Effect of Deep States on the Photovoltaic Performance of CdZnS/CuInSe2 Thin Film Devices

AU - Ahrenkiel, R. K.

PY - 1986

Y1 - 1986

N2 - High densities of both bulk and interface states were found in CdZnS/CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced the CuInSe2 diffusion potential. A model was proposed using interface recombination as the only diode current mechanism. This model relates interface state charging to a reduced open-circuit voltage.

AB - High densities of both bulk and interface states were found in CdZnS/CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced the CuInSe2 diffusion potential. A model was proposed using interface recombination as the only diode current mechanism. This model relates interface state charging to a reduced open-circuit voltage.

UR - https://www.scopus.com/pages/publications/0022598567

U2 - 10.1016/0379-6787(86)90109-2

DO - 10.1016/0379-6787(86)90109-2

M3 - Article

AN - SCOPUS:0022598567

SN - 0379-6787

VL - 16

SP - 549

EP - 565

JO - Solar Cells

JF - Solar Cells

IS - C

ER -

Effect of Deep States on the Photovoltaic Performance of CdZnS/CuInSe2 Thin Film Devices

Abstract

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