Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP

N. M. Haegel; T. Christian; C. Scandrett; A. G. Norman; A. Mascarenhas; Pranob Misra; Ting Liu; Arsen Sukiasyan; Evan Pickett; Homan Yuen

doi:10.1063/1.4902316

Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP

N. M. Haegel
, T. Christian
, C. Scandrett
, A. G. Norman
, A. Mascarenhas
, Pranob Misra
, Ting Liu
, Arsen Sukiasyan
, Evan Pickett
, Homan Yuen

National Renewable Energy Laboratory
Naval Postgraduate School
Solar Junction Corporation

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300K vary from ∼2000 to 400cm²/Vs and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

Original language	American English
Article number	Article No. 202116
Number of pages	5
Journal	Applied Physics Letters
Volume	105
Issue number	20
DOIs	https://doi.org/10.1063/1.4902316 https://doi.org/10.1063/1.4902316
State	Published - 17 Nov 2014

Bibliographical note

Publisher Copyright:
© 2014 AIP Publishing LLC.

NLR Publication Number

NREL/JA-5K00-63095

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Haegel, N. M., Christian, T., Scandrett, C., Norman, A. G., Mascarenhas, A., Misra, P., Liu, T., Sukiasyan, A., Pickett, E., & Yuen, H. (2014). Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP. Applied Physics Letters, 105(20), Article Article No. 202116. https://doi.org/10.1063/1.4902316, https://doi.org/10.1063/1.4902316

@article{be39485d1d0644f19df5fe8973d7c282,

title = "Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP",

abstract = "Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300K vary from ∼2000 to 400cm2/Vs and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.",

author = "Haegel, \{N. M.\} and T. Christian and C. Scandrett and Norman, \{A. G.\} and A. Mascarenhas and Pranob Misra and Ting Liu and Arsen Sukiasyan and Evan Pickett and Homan Yuen",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = nov,

day = "17",

doi = "10.1063/1.4902316",

language = "American English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP

AU - Haegel, N. M.

AU - Christian, T.

AU - Scandrett, C.

AU - Norman, A. G.

AU - Mascarenhas, A.

AU - Misra, Pranob

AU - Liu, Ting

AU - Sukiasyan, Arsen

AU - Pickett, Evan

AU - Yuen, Homan

PY - 2014/11/17

Y1 - 2014/11/17

N2 - Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300K vary from ∼2000 to 400cm2/Vs and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

AB - Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300K vary from ∼2000 to 400cm2/Vs and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

UR - https://www.scopus.com/pages/publications/84911889492

U2 - 10.1063/1.4902316

DO - 10.1063/1.4902316

M3 - Article

AN - SCOPUS:84911889492

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - Article No. 202116

ER -

Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP

Abstract

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