Abstract
PolySi:Ga/SiO.sub.2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.
| Original language | American English |
|---|---|
| Patent number | 11,362,221 B2 |
| Filing date | 14/06/22 |
| State | Published - 2022 |
NLR Publication Number
- NREL/PT-5900-83210
Keywords
- fabrication
- gallium doped passivated contacts
- ion implantation
- spin-on doping
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