Abstract
The benefit of local built-in potential on grain boundaries of voltaic Cu(In, Ga)Se 2 (CIGS) thin films in photoconversion efficiency of the device was described. It was found that the band gap of CIGS can be tuned from 1.01 to 1.68 eV by adjusting the Ga/(In+Ga) from 0% to 100%. It was also found that the Ga content of ∼65% provides the optimal band-gap value for optimal conversion efficiency. The built-in potential on the GB plays a significant role in the device conversion efficeincy of NREL's three-stage CIGS device.
| Original language | American English |
|---|---|
| Pages (from-to) | 2625-2627 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 13 |
| DOIs | |
| State | Published - 27 Sep 2004 |
NLR Publication Number
- NREL/JA-520-36259
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