Abstract
We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd-O bonds at the grain boundaries, which are resistance to the S diffusion.
| Original language | American English |
|---|---|
| Pages (from-to) | 171-173 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 78 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2001 |
NLR Publication Number
- NREL/JA-520-29006
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