DLTS Characterization of CIGS Cells

DLTS Characterization of CIGS Cells

NREL

Research output: Contribution to conference › Paper

Abstract

Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.

Original language	American English
Number of pages	4
State	Published - 2003
Event	NCPV and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003

Conference

Conference	NCPV and Solar Program Review Meeting
City	Denver, Colorado
Period	24/03/03 → 26/03/03

NLR Publication Number

NREL/CP-520-35644

Keywords

capacitance voltage (CV)
deep level transient spectroscopy (DLTS)
thin films

Access to Document

https://www.nrel.gov/docs/fy03osti/35644.pdf

Cite this

@conference{6591bb0454e843899f8573b9f1765c81,

title = "DLTS Characterization of CIGS Cells",

abstract = "Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.",

keywords = "capacitance voltage (CV), deep level transient spectroscopy (DLTS), thin films",

author = "NREL",

year = "2003",

language = "American English",

note = "NCPV and Solar Program Review Meeting ; Conference date: 24-03-2003 Through 26-03-2003",

}

TY - CONF

T1 - DLTS Characterization of CIGS Cells

AU - NREL, null

PY - 2003

Y1 - 2003

N2 - Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.

AB - Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.

KW - capacitance voltage (CV)

KW - deep level transient spectroscopy (DLTS)

KW - thin films

M3 - Paper

T2 - NCPV and Solar Program Review Meeting

Y2 - 24 March 2003 through 26 March 2003

ER -

DLTS Characterization of CIGS Cells

Abstract

Conference

NLR Publication Number

Keywords

Access to Document

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Cite this