Dislocation Density Reduction through Annihilation in Lattice Mismatched Semiconductors Grown by Molecular Beam Epitaxy

P. Sheldon; K. M. Jones; M. M. Al-Jassim; B. G. Yacobi

doi:10.1063/1.340343

Dislocation Density Reduction through Annihilation in Lattice Mismatched Semiconductors Grown by Molecular Beam Epitaxy

P. Sheldon
, K. M. Jones
, M. M. Al-Jassim
, B. G. Yacobi

Materials Science

National Renewable Energy Laboratory
Verizon Communications

Research output: Contribution to journal › Article › peer-review

79 Scopus Citations

Abstract

Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%<∥Δa∥/a<7.2%), to differences in thermal expansion coefficients (6.9×10^- ⁷<∥Δα∥<3.4×10^-6 K ^-1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.

Original language	American English
Pages (from-to)	5609-5611
Number of pages	3
Journal	Journal of Applied Physics
Volume	63
Issue number	11
DOIs	https://doi.org/10.1063/1.340343 https://doi.org/10.1063/1.340343
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and GTE Laboratories, Waltham, Massachusetts

NLR Publication Number

ACNR/JA-213-10435

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Cite this

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title = "Dislocation Density Reduction through Annihilation in Lattice Mismatched Semiconductors Grown by Molecular Beam Epitaxy",

abstract = "Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2\%<∥Δa∥/a<7.2\%), to differences in thermal expansion coefficients (6.9×10- 7<∥Δα∥<3.4×10-6 K -1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.",

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AU - Sheldon, P.

AU - Jones, K. M.

AU - Al-Jassim, M. M.

AU - Yacobi, B. G.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and GTE Laboratories, Waltham, Massachusetts

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N2 - Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%<∥Δa∥/a<7.2%), to differences in thermal expansion coefficients (6.9×10- 7<∥Δα∥<3.4×10-6 K -1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.

AB - Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%<∥Δa∥/a<7.2%), to differences in thermal expansion coefficients (6.9×10- 7<∥Δα∥<3.4×10-6 K -1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.

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U2 - 10.1063/1.340343

DO - 10.1063/1.340343

M3 - Article

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JF - Journal of Applied Physics

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ER -

Dislocation Density Reduction through Annihilation in Lattice Mismatched Semiconductors Grown by Molecular Beam Epitaxy

Abstract

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