Direct Writing of GaAs Monolayers by Laser-Assisted Atomic Layer Epitaxy

Research output: Contribution to journal › Article

Work performed by Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina

NLR Publication Number

@article{b1cdaf903c574f68bb643c3f0e174474,

title = "Direct Writing of GaAs Monolayers by Laser-Assisted Atomic Layer Epitaxy",

author = "NREL",

note = "Work performed by Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina",

year = "1988",

doi = "10.1063/1.99186",

language = "American English",

volume = "52",

pages = "1144--1146",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Direct Writing of GaAs Monolayers by Laser-Assisted Atomic Layer Epitaxy

AU - NREL, null

N1 - Work performed by Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina

PY - 1988

Y1 - 1988

U2 - 10.1063/1.99186

DO - 10.1063/1.99186

M3 - Article

SN - 0003-6951

VL - 52

SP - 1144

EP - 1146

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -