Development of Radio-Frequency Magnetron Sputtered Indium Molybdenum Oxide

Y. Yoshida; T. A. Gessert; C. L. Perkins; T. J. Coutts

doi:10.1116/1.1586281

Development of Radio-Frequency Magnetron Sputtered Indium Molybdenum Oxide

Y. Yoshida
, T. A. Gessert
, C. L. Perkins
, T. J. Coutts

Materials Science

Colorado School of Mines
National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

75 Scopus Citations

Abstract

Radio-frequency (rf) magnetron sputtering was used to investigate the effects of oxygen partial pressure and substrate temperature on the electrical properties of IMO films. In addition, comparisons of IMO films with In₂O₃ films prepared similarly were used to illustrate the effects of the Mo dopant.

Original language	American English
Pages (from-to)	1092-1097
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1586281 https://doi.org/10.1116/1.1586281
State	Published - 2003

NLR Publication Number

NREL/JA-520-33053

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title = "Development of Radio-Frequency Magnetron Sputtered Indium Molybdenum Oxide",

abstract = "Radio-frequency (rf) magnetron sputtering was used to investigate the effects of oxygen partial pressure and substrate temperature on the electrical properties of IMO films. In addition, comparisons of IMO films with In2O3 films prepared similarly were used to illustrate the effects of the Mo dopant.",

author = "Y. Yoshida and Gessert, \{T. A.\} and Perkins, \{C. L.\} and Coutts, \{T. J.\}",

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pages = "1092--1097",

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issn = "0734-2101",

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T1 - Development of Radio-Frequency Magnetron Sputtered Indium Molybdenum Oxide

AU - Yoshida, Y.

AU - Gessert, T. A.

AU - Perkins, C. L.

AU - Coutts, T. J.

PY - 2003

Y1 - 2003

N2 - Radio-frequency (rf) magnetron sputtering was used to investigate the effects of oxygen partial pressure and substrate temperature on the electrical properties of IMO films. In addition, comparisons of IMO films with In2O3 films prepared similarly were used to illustrate the effects of the Mo dopant.

AB - Radio-frequency (rf) magnetron sputtering was used to investigate the effects of oxygen partial pressure and substrate temperature on the electrical properties of IMO films. In addition, comparisons of IMO films with In2O3 films prepared similarly were used to illustrate the effects of the Mo dopant.

UR - https://www.scopus.com/pages/publications/0041529608

U2 - 10.1116/1.1586281

DO - 10.1116/1.1586281

M3 - Article

AN - SCOPUS:0041529608

SN - 0734-2101

VL - 21

SP - 1092

EP - 1097

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Development of Radio-Frequency Magnetron Sputtered Indium Molybdenum Oxide

Abstract

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