Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

NREL

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Abstract

The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated bycross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Original language	American English
Pages	483-488
Number of pages	6
State	Published - 1997
Event	Materials Research Society Symposium - Boston, Massachusetts Duration: 27 Nov 1995 → 1 Dec 1995

Conference

Conference	Materials Research Society Symposium
City	Boston, Massachusetts
Period	27/11/95 → 1/12/95

NLR Publication Number

NREL/CP-22311

Cite this

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title = "Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates",

abstract = "The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated bycross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.",

author = "NREL",

year = "1997",

language = "American English",

pages = "483--488",

note = "Materials Research Society Symposium ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - CONF

T1 - Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

AU - NREL, null

PY - 1997

Y1 - 1997

N2 - The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated bycross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

AB - The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated bycross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

UR - https://www.scopus.com/pages/publications/0030413828

M3 - Paper

SP - 483

EP - 488

T2 - Materials Research Society Symposium

Y2 - 27 November 1995 through 1 December 1995

ER -

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

Abstract

Conference

NLR Publication Number

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