Determination of Spatial Uniformity by Ion Imaging with Secondary Ion Mass Spectrometry (SIMS)

Determination of Spatial Uniformity by Ion Imaging with Secondary Ion Mass Spectrometry (SIMS)

NREL

Research output: Contribution to conference › Paper

Abstract

This paper discusses some of the problems associated with applying secondary ion mass spectrometry (SIMS) to non uniform solar cell materials from the characterization viewpoint. Two examples are given: depth profile analysis of contacts on III-V materials, and bulk analysis of processed silicon materials.

Original language	American English
Number of pages	6
State	Published - 2003
Event	National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003

Conference

Conference	National Center for Photovoltaics (NCPV) and Solar Program Review Meeting
City	Denver, Colorado
Period	24/03/03 → 26/03/03

NLR Publication Number

NREL/CP-520-33592

Keywords

bulk analysis
characterizations
depth-profile analysis
II-V material
ion imaging
secondary ion mass spectrometry (SIMS)
silicon
solar cells
spatial uniformity

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title = "Determination of Spatial Uniformity by Ion Imaging with Secondary Ion Mass Spectrometry (SIMS)",

abstract = "This paper discusses some of the problems associated with applying secondary ion mass spectrometry (SIMS) to non uniform solar cell materials from the characterization viewpoint. Two examples are given: depth profile analysis of contacts on III-V materials, and bulk analysis of processed silicon materials.",

keywords = "bulk analysis, characterizations, depth-profile analysis, II-V material, ion imaging, secondary ion mass spectrometry (SIMS), silicon, solar cells, spatial uniformity",

author = "NREL",

year = "2003",

language = "American English",

note = "National Center for Photovoltaics (NCPV) and Solar Program Review Meeting ; Conference date: 24-03-2003 Through 26-03-2003",

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TY - CONF

T1 - Determination of Spatial Uniformity by Ion Imaging with Secondary Ion Mass Spectrometry (SIMS)

AU - NREL, null

PY - 2003

Y1 - 2003

N2 - This paper discusses some of the problems associated with applying secondary ion mass spectrometry (SIMS) to non uniform solar cell materials from the characterization viewpoint. Two examples are given: depth profile analysis of contacts on III-V materials, and bulk analysis of processed silicon materials.

AB - This paper discusses some of the problems associated with applying secondary ion mass spectrometry (SIMS) to non uniform solar cell materials from the characterization viewpoint. Two examples are given: depth profile analysis of contacts on III-V materials, and bulk analysis of processed silicon materials.

KW - bulk analysis

KW - characterizations

KW - depth-profile analysis

KW - II-V material

KW - ion imaging

KW - secondary ion mass spectrometry (SIMS)

KW - silicon

KW - solar cells

KW - spatial uniformity

M3 - Paper

T2 - National Center for Photovoltaics (NCPV) and Solar Program Review Meeting

Y2 - 24 March 2003 through 26 March 2003

ER -

Determination of Spatial Uniformity by Ion Imaging with Secondary Ion Mass Spectrometry (SIMS)

Abstract

Conference

NLR Publication Number

Keywords

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