Deposition of Device Quality, Low Hydrogen Content, Hydrogenated Amorphous Silicon at High Deposition Rates with Increased Stability Using the Hot Wire Filament Technique

Deposition of Device Quality, Low Hydrogen Content, Hydrogenated Amorphous Silicon at High Deposition Rates with Increased Stability Using the Hot Wire Filament Technique

NREL (Inventor)

Research output: Patent

Original language	American English
Patent number	6,124,186
State	Published - 2000

NLR Publication Number

NREL/PT-520-29290

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6124186

Cite this

@misc{8cad3bdfdf234a829b3c4cf46ba36208,

title = "Deposition of Device Quality, Low Hydrogen Content, Hydrogenated Amorphous Silicon at High Deposition Rates with Increased Stability Using the Hot Wire Filament Technique",

author = "NREL",

year = "2000",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

note = "6,124,186",

}