Deposition of Device Quality, Low Hydrogen Content, Amorphous Silicon Films by Hot Filament Technique Using 'Safe' Silicon Source Gas

Research output: Patent

NLR Publication Number

@misc{33408766c90d4b5fae7078bd12980131,

title = "Deposition of Device Quality, Low Hydrogen Content, Amorphous Silicon Films by Hot Filament Technique Using 'Safe' Silicon Source Gas",

author = "NREL",

year = "1998",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

note = "5,776,819",

}