Abstract
CuInAl precursor films with varying Al/(Al+In) ratios were co-sputtered onto Mo coated soda-lime glass substrates. Samples were then selenized under high vacuum using thermally evaporated elemental selenium. Single-step and two-step selenization heating profiles were investigated. Single-step samples resulted in better Mo-CuInAlSe2 adhesion than those selenized using the two-step approach. Precursor and selenized films were characterized for composition, crystalline structure, surface morphology, and composition with depth. The development of a method to co-sputtered CuInAl precursors is discussed, as well as the effect of selenization temperature and heating profile on selenized film properties.
| Original language | American English |
|---|---|
| Pages | 247-251 |
| Number of pages | 5 |
| DOIs | |
| State | Published - 2009 |
| Event | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
| Conference | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
|---|---|
| Country/Territory | United States |
| City | Philadelphia, PA |
| Period | 7/06/09 → 12/06/09 |
NLR Publication Number
- NREL/CP-520-48201
Keywords
- precursor films
- selinization
- selinized film properties
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