Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Myles Steiner; Emily Warren; Adele Tamboli; Marius Zehender; Ivan Garcia; Simon Svatek; Pablo Linares; Antonio Marti; Elisa Antolin

doi:10.1109/PVSC40753.2019.8980563

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Myles Steiner
, Emily Warren
, Adele Tamboli
, Marius Zehender
, Ivan Garcia
, Simon Svatek
, Pablo Linares
, Antonio Marti
, Elisa Antolin

Technical University of Madrid

Research output: Contribution to conference › Paper › peer-review

8 Scopus Citations

Abstract

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V_OC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V_OC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

Original language	American English
Pages	35-40
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980563 https://doi.org/10.1109/PVSC40753.2019.8980563
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NLR Publication Number

NREL/CP-5900-73145

Keywords

double junction
gallium arsenide
gallium indium phosphide
independent current
multi terminal
photovoltaic cells

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Steiner, M., Warren, E., Tamboli, A., Zehender, M., Garcia, I., Svatek, S., Linares, P., Marti, A., & Antolin, E. (2019). Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell. 35-40. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8980563, https://doi.org/10.1109/PVSC40753.2019.8980563

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title = "Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell",

abstract = "The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80\%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5\% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.",

keywords = "double junction, gallium arsenide, gallium indium phosphide, independent current, multi terminal, photovoltaic cells",

author = "Myles Steiner and Emily Warren and Adele Tamboli and Marius Zehender and Ivan Garcia and Simon Svatek and Pablo Linares and Antonio Marti and Elisa Antolin",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

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doi = "10.1109/PVSC40753.2019.8980563",

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Steiner, M , Warren, E, Tamboli, A, Zehender, M, Garcia, I, Svatek, S, Linares, P, Marti, A & Antolin, E 2019, 'Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 35-40. https://doi.org/10.1109/PVSC40753.2019.8980563, https://doi.org/10.1109/PVSC40753.2019.8980563

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AU - Steiner, Myles

AU - Warren, Emily

AU - Tamboli, Adele

AU - Zehender, Marius

AU - Garcia, Ivan

AU - Svatek, Simon

AU - Linares, Pablo

AU - Marti, Antonio

AU - Antolin, Elisa

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N2 - The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

AB - The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

KW - double junction

KW - gallium arsenide

KW - gallium indium phosphide

KW - independent current

KW - multi terminal

KW - photovoltaic cells

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M3 - Paper

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T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

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Keywords

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