Abstract
We use two-wavelength excitation photoluminescence spectroscopy to probe defect states in CIGS thin films. Above-Eg excitation is combined with a tunable IR bias light that modulates the population of the defect states. We find that IR illumination in the range of 1400-2000 nm (0.62-0.89 eV) causes a reduction of the PL intensity, the magnitude of which scales linearly with IR power. Further, KF post deposition treatment has only a modest influence on the effect of the IR excitation. Initial data suggest that we have developed an optical characterization tool for band-gap defect states.
| Original language | American English |
|---|---|
| Pages | 3556-3558 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 18 Nov 2016 |
| Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 |
Conference
| Conference | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
|---|---|
| Country/Territory | United States |
| City | Portland |
| Period | 5/06/16 → 10/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
NLR Publication Number
- NREL/CP-5900-65730
Keywords
- CIGS
- defects
- PL spectroscopy
- post deposition treatment
- SRH recombination
Fingerprint
Dive into the research topics of 'Defect States in Copper Indium Gallium Selenide Solar Cells from Two-Wavelength Excitation Photoluminescence Spectroscopy'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver