Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	99-103
Number of pages	5
State	Published - 1987
Event	Heteroepitaxy on Silicon II: Materials Research Society Symposium - Anaheim, California Duration: 21 Apr 1987 → 23 Apr 1987

Conference

Conference	Heteroepitaxy on Silicon II: Materials Research Society Symposium
City	Anaheim, California
Period	21/04/87 → 23/04/87

Bibliographical note

Work performed by Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina and Kopin Corporation, Taunton, Massachusetts

NLR Publication Number

ACNR/CP-9895

Cite this

@conference{48a00b6f136a4a4f81f79f73e2191968,

title = "Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices",

author = "NREL",

note = "Work performed by Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina and Kopin Corporation, Taunton, Massachusetts; Heteroepitaxy on Silicon II: Materials Research Society Symposium ; Conference date: 21-04-1987 Through 23-04-1987",

year = "1987",

language = "American English",

pages = "99--103",

}

TY - CONF

T1 - Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

AU - NREL, null

N1 - Work performed by Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina and Kopin Corporation, Taunton, Massachusetts

PY - 1987

Y1 - 1987

M3 - Paper

SP - 99

EP - 103

T2 - Heteroepitaxy on Silicon II: Materials Research Society Symposium

Y2 - 21 April 1987 through 23 April 1987

ER -