Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	American English
Title of host publication	Tetrahedrally-Bonded Amorphous Semiconductors
Editors	D. Adler, H. Fritzsche
Pages	197-211
DOIs	https://doi.org/10.1007/978-1-4899-5361-2_17
State	Published - 1985

Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina

NLR Publication Number

@inbook{61471ea535d84ce58dc997d719c41099,

title = "Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method",

author = "NREL",

note = "Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina",

year = "1985",

doi = "10.1007/978-1-4899-5361-2\_17",

language = "American English",

pages = "197--211",

editor = "D. Adler and H. Fritzsche",

booktitle = "Tetrahedrally-Bonded Amorphous Semiconductors",

}

TY - CHAP

T1 - Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method

AU - NREL, null

N1 - Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina

PY - 1985

Y1 - 1985

U2 - 10.1007/978-1-4899-5361-2_17

DO - 10.1007/978-1-4899-5361-2_17

M3 - Chapter

SP - 197

EP - 211

BT - Tetrahedrally-Bonded Amorphous Semiconductors

A2 - Adler, D.

A2 - Fritzsche, H.

ER -