Crystal Chemistry and Vapor Growth Application to Ternary Semiconductors

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	183-202
Number of pages	20
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	19
Issue number	Supplement 19-3
DOIs	https://doi.org/10.7567/JJAPS.19S3.183
State	Published - 1980

NLR Publication Number

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title = "Crystal Chemistry and Vapor Growth Application to Ternary Semiconductors",

author = "NREL",

year = "1980",

doi = "10.7567/JJAPS.19S3.183",

language = "American English",

volume = "19",

pages = "183--202",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "Supplement 19-3",

}

TY - JOUR

T1 - Crystal Chemistry and Vapor Growth Application to Ternary Semiconductors

AU - NREL, null

PY - 1980

Y1 - 1980

U2 - 10.7567/JJAPS.19S3.183

DO - 10.7567/JJAPS.19S3.183

M3 - Article

SN - 0021-4922

VL - 19

SP - 183

EP - 202

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - Supplement 19-3

ER -