Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting: Article No. 112112

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NLR Publication Number

@article{07db5f70ad774e37b682af7f10d2efce,

title = "Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting: Article No. 112112",

keywords = "hyperdoped, ion implantation, pulsed laser melting",

author = "\{Reedy Jr.\}, Robert",

year = "2012",

doi = "10.1063/1.3695171",

language = "American English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting

T2 - Article No. 112112

AU - Reedy Jr., Robert

PY - 2012

Y1 - 2012

KW - hyperdoped

KW - ion implantation

KW - pulsed laser melting

U2 - 10.1063/1.3695171

DO - 10.1063/1.3695171

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -