Contactless Technique for Measuring Minority-Carrier Parameters in Silicon

Richard Ahrenkiel

Contactless Technique for Measuring Minority-Carrier Parameters in Silicon

Richard Ahrenkiel

Materials Science

Research output: Contribution to conference › Paper

Abstract

Characterization of minority-carrier parameters is a primary interest for a range of devices, including solar cells. For 'on-line' testing needs, contactless techniques are mandatory, as any diagnostic requiring contact formation is impractical. Here, we will describe the resonance-coupled; photoconductive decay (RCPCD) technique that has proven to be a valuable diagnostic for a number ofsemiconductor technologies.

Original language	American English
Pages	103-109
Number of pages	7
State	Published - 2002
Event	12th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 11 Aug 2002 → 14 Aug 2002

Conference

Conference	12th Workshop on Crystalline Silicon Solar Cell Materials and Processes
City	Breckenridge, Colorado
Period	11/08/02 → 14/08/02

NLR Publication Number

NREL/CP-520-35649

Keywords

12th workshop
crystalline silicon (x-Si) (c-Si)
PV
solar cell materials

Access to Document

https://www.nrel.gov/docs/fy02osti/35649.pdf

Cite this

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title = "Contactless Technique for Measuring Minority-Carrier Parameters in Silicon",

abstract = "Characterization of minority-carrier parameters is a primary interest for a range of devices, including solar cells. For 'on-line' testing needs, contactless techniques are mandatory, as any diagnostic requiring contact formation is impractical. Here, we will describe the resonance-coupled; photoconductive decay (RCPCD) technique that has proven to be a valuable diagnostic for a number ofsemiconductor technologies.",

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year = "2002",

language = "American English",

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T1 - Contactless Technique for Measuring Minority-Carrier Parameters in Silicon

AU - Ahrenkiel, Richard

PY - 2002

Y1 - 2002

N2 - Characterization of minority-carrier parameters is a primary interest for a range of devices, including solar cells. For 'on-line' testing needs, contactless techniques are mandatory, as any diagnostic requiring contact formation is impractical. Here, we will describe the resonance-coupled; photoconductive decay (RCPCD) technique that has proven to be a valuable diagnostic for a number ofsemiconductor technologies.

AB - Characterization of minority-carrier parameters is a primary interest for a range of devices, including solar cells. For 'on-line' testing needs, contactless techniques are mandatory, as any diagnostic requiring contact formation is impractical. Here, we will describe the resonance-coupled; photoconductive decay (RCPCD) technique that has proven to be a valuable diagnostic for a number ofsemiconductor technologies.

KW - 12th workshop

KW - crystalline silicon (x-Si) (c-Si)

KW - PV

KW - solar cell materials

M3 - Paper

SP - 103

EP - 109

T2 - 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes

Y2 - 11 August 2002 through 14 August 2002

ER -

Contactless Technique for Measuring Minority-Carrier Parameters in Silicon

Abstract

Conference

NLR Publication Number

Keywords

Access to Document

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Cite this