Contact Formation and Gettering of Precipitated Impurities by Multiple Firing During Semiconductor Device Fabrication

Contact Formation and Gettering of Precipitated Impurities by Multiple Firing During Semiconductor Device Fabrication

NREL (Inventor)

Research output: Patent

Abstract

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a frontcontact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Original language	American English
Patent number	8,735,204
Filing date	27/05/14
State	Published - 2014

Bibliographical note

Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)

NLR Publication Number

NREL/PT-5J00-62978

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8735204

Cite this

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title = "Contact Formation and Gettering of Precipitated Impurities by Multiple Firing During Semiconductor Device Fabrication",

abstract = "Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a frontcontact for the semiconductor wafer, wherein the second step is performed after completion of the first step.",

author = "NREL",

note = "Assignee: Alliance for Sustainable Energy, LLC (Golden, CO); 8,735,204",

year = "2014",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

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TY - PAT

T1 - Contact Formation and Gettering of Precipitated Impurities by Multiple Firing During Semiconductor Device Fabrication

AU - NREL, null

N1 - Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)

PY - 2014

Y1 - 2014

N2 - Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a frontcontact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

AB - Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a frontcontact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

M3 - Patent

M1 - 8,735,204

Y2 - 2014/05/27

PB - National Laboratory of the Rockies (NLR)

ER -

Contact Formation and Gettering of Precipitated Impurities by Multiple Firing During Semiconductor Device Fabrication

Abstract

Bibliographical note

NLR Publication Number

Access to Document

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Cite this