Abstract
The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.
| Original language | American English |
|---|---|
| Pages (from-to) | 2099-2103 |
| Number of pages | 5 |
| Journal | Journal of the American Ceramic Society |
| Volume | 98 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2015 |
Bibliographical note
Publisher Copyright:© 2015 The American Ceramic Society.
NLR Publication Number
- NREL/JA-5900-64948
Keywords
- characterization
- defect mechanisms
- thin films
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