Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

Bhushan Sopori; Srinivas Devayajanam; Prakash Basnyat; Vishal Mehta; Helio Moutinho; Bill Nemeth; Vincenzo Lasalvia; Steve Johnston; N. M. Ravindra; Jeff Binns; Jesse Appel

doi:10.1557/opl.2014.591

Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

Bhushan Sopori
, Srinivas Devayajanam
, Prakash Basnyat
, Vishal Mehta
, Helio Moutinho
, Bill Nemeth
, Vincenzo Lasalvia
, Steve Johnston
, N. M. Ravindra
, Jeff Binns
, Jesse Appel

National Renewable Energy Laboratory
New Jersey Institute of Technology
SunEdison

Research output: Contribution to conference › Paper › peer-review

Abstract

We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

Original language	American English
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2014.591 https://doi.org/10.1557/opl.2014.591
State	Published - 2014
Event	2014 MRS Spring Meeting - San Francisco, United States Duration: 21 Apr 2014 → 25 Apr 2014

Conference

Conference	2014 MRS Spring Meeting
Country/Territory	United States
City	San Francisco
Period	21/04/14 → 25/04/14

Bibliographical note

Publisher Copyright:
Copyright © 2014 Materials Research Society.

NLR Publication Number

NREL/CP-5J00-60713

Keywords

oxide
passivation
Si

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Sopori, B., Devayajanam, S., Basnyat, P., Mehta, V., Moutinho, H., Nemeth, B., Lasalvia, V., Johnston, S., Ravindra, N. M., Binns, J., & Appel, J. (2014). Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation. Paper presented at 2014 MRS Spring Meeting, San Francisco, United States. https://doi.org/10.1557/opl.2014.591, https://doi.org/10.1557/opl.2014.591

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title = "Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation",

abstract = "We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.",

keywords = "oxide, passivation, Si",

author = "Bhushan Sopori and Srinivas Devayajanam and Prakash Basnyat and Vishal Mehta and Helio Moutinho and Bill Nemeth and Vincenzo Lasalvia and Steve Johnston and Ravindra, \{N. M.\} and Jeff Binns and Jesse Appel",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 Materials Research Society.; 2014 MRS Spring Meeting ; Conference date: 21-04-2014 Through 25-04-2014",

year = "2014",

doi = "10.1557/opl.2014.591",

language = "American English",

}

Sopori, B, Devayajanam, S, Basnyat, P, Mehta, V, Moutinho, H, Nemeth, B, Lasalvia, V, Johnston, S, Ravindra, NM, Binns, J & Appel, J 2014, 'Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation', Paper presented at 2014 MRS Spring Meeting, San Francisco, United States, 21/04/14 - 25/04/14. https://doi.org/10.1557/opl.2014.591, https://doi.org/10.1557/opl.2014.591

TY - CONF

T1 - Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

AU - Sopori, Bhushan

AU - Devayajanam, Srinivas

AU - Basnyat, Prakash

AU - Mehta, Vishal

AU - Moutinho, Helio

AU - Nemeth, Bill

AU - Lasalvia, Vincenzo

AU - Johnston, Steve

AU - Ravindra, N. M.

AU - Binns, Jeff

AU - Appel, Jesse

PY - 2014

Y1 - 2014

N2 - We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

AB - We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

KW - oxide

KW - passivation

KW - Si

UR - https://www.scopus.com/pages/publications/84924388426

U2 - 10.1557/opl.2014.591

DO - 10.1557/opl.2014.591

M3 - Paper

AN - SCOPUS:84924388426

T2 - 2014 MRS Spring Meeting

Y2 - 21 April 2014 through 25 April 2014

ER -

Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

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