Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48

K. Emery; I. M. Dharmadasa; N. B. Chaure; J. Young; A. P. Samantilleke; T. Delsol

doi:10.1088/0268-1242/18/8/401

Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48

K. Emery
, I. M. Dharmadasa
, N. B. Chaure
, J. Young
, A. P. Samantilleke
, T. Delsol

Chemistry and Nanoscience

Sheffield Hallam University

Research output: Contribution to journal › Article › peer-review

Abstract

Current densities under standard 1-sun terrestrial reporting conditions over 60 mA cm^-2 are not physically possible for CdTe (Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238). This comment discusses why the reported current density and efficiency should be considered erroneous and not an improvement over existing CdTe cells.

Original language	American English
Pages (from-to)	812-816
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	18
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/18/8/401
State	Published - Aug 2003

NLR Publication Number

NREL/JA-520-35024

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10.1088/0268-1242/18/8/401

Cite this

Emery, K., Dharmadasa, I. M., Chaure, N. B., Young, J., Samantilleke, A. P., & Delsol, T. (2003). Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48. Semiconductor Science and Technology, 18(8), 812-816. https://doi.org/10.1088/0268-1242/18/8/401

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title = "Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48",

abstract = "Current densities under standard 1-sun terrestrial reporting conditions over 60 mA cm-2 are not physically possible for CdTe (Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238). This comment discusses why the reported current density and efficiency should be considered erroneous and not an improvement over existing CdTe cells.",

author = "K. Emery and Dharmadasa, \{I. M.\} and Chaure, \{N. B.\} and J. Young and Samantilleke, \{A. P.\} and T. Delsol",

year = "2003",

month = aug,

doi = "10.1088/0268-1242/18/8/401",

language = "American English",

volume = "18",

pages = "812--816",

journal = "Semiconductor Science and Technology",

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Emery, K, Dharmadasa, IM, Chaure, NB, Young, J, Samantilleke, AP & Delsol, T 2003, 'Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48', Semiconductor Science and Technology, vol. 18, no. 8, pp. 812-816. https://doi.org/10.1088/0268-1242/18/8/401

Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48. / Emery, K.; Dharmadasa, I. M.; Chaure, N. B. et al.
In: Semiconductor Science and Technology, Vol. 18, No. 8, 08.2003, p. 812-816.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

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AU - Emery, K.

AU - Dharmadasa, I. M.

AU - Chaure, N. B.

AU - Young, J.

AU - Samantilleke, A. P.

AU - Delsol, T.

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AB - Current densities under standard 1-sun terrestrial reporting conditions over 60 mA cm-2 are not physically possible for CdTe (Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238). This comment discusses why the reported current density and efficiency should be considered erroneous and not an improvement over existing CdTe cells.

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M3 - Article

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SN - 0268-1242

VL - 18

SP - 812

EP - 816

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Comment on 'New Ways of Developing Glass/ Conducting Glass/ CdS/CdTe Metal Thin-Film Solar Cells Bases on a New Model' by Dharmadasa et al 2002 Semicond. Sci. Technol. 17 1238-48

Abstract

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