CIS-Type PV Device Fabrication by Novel Techniques: Phase I Annual Technical Report, 1 July 1998 - 30 June 1999

Engineering

• Technical Report 100%
• Phase Technique 100%
• Grain Size 100%
• Particle Size 100%
• Photovoltaics 50%
• Power Conversion Efficiency 50%
• Device Structure 50%
• Absorber Layer 50%
• Back Contact 50%
• Processing Step 50%
• Shunt Resistance 50%
• Deposition Method 50%
• Contact Problem 50%
• I Program 50%
• Band Gap 50%
• Solar Cell 50%
• Reaction Stoichiometry 50%

Material Science

• Film 100%
• Device Fabrication 100%
• Grain Size 50%
• Ink 50%
• Solar Cell 25%
• Photovoltaics 25%
• Device Type 25%
• Device Efficiency 25%

Earth and Planetary Sciences

• Commonwealth of Independent States 100%
• Grain Size 20%
• Particle Size 20%
• Ink 20%
• Energy Gaps (Solid State) 10%
• Stoichiometry 10%
• Solar Cell 10%