Chemical Nature and Atomic Structure of Midgap Levels in Molecular-Beam Epitaxially Grown AlxGa1-xAs: Summary Abstract

Research output: Contribution to conference › Paper

Work performed by Department of Electrical Engineering, Howard University, Washington, DC

NLR Publication Number

@conference{9d3db60fb715455e8da6e1f28528f884,

title = "Chemical Nature and Atomic Structure of Midgap Levels in Molecular-Beam Epitaxially Grown AlxGa1-xAs: Summary Abstract",

author = "NREL",

note = "Work performed by Department of Electrical Engineering, Howard University, Washington, DC",

year = "1988",

doi = "10.1116/1.584379",

language = "American English",

pages = "647--648",

}